8. Innovative architectures for ultimate SOI transistors
8.1 Dynamic threshold voltage transistor: DT-MOSFET
The DT-MOSFET is a very interesting partially depleted transistor, operating on the principle of a dynamic threshold voltage. This configuration is simply achieved by connecting the gate and the silicon layer (figure 19 e). As the gate voltage increases in weak inversion, the simultaneous increase in potential in the silicon film causes a gradual reduction in the threshold voltage. DT-MOSFET devices achieve perfect gate-charge coupling, a slope at low maximum inversion, improved transconductance and higher drain current. These features are highly attractive for low-voltage-low-power circuits: low quiescent leakage...
Exclusive to subscribers. 97% yet to be discovered!
You do not have access to this resource.
Click here to request your free trial access!
Already subscribed? Log in!
The Ultimate Scientific and Technical Reference
This article is included in
Electronics
This offer includes:
Knowledge Base
Updated and enriched with articles validated by our scientific committees
Services
A set of exclusive tools to complement the resources
Practical Path
Operational and didactic, to guarantee the acquisition of transversal skills
Doc & Quiz
Interactive articles with quizzes, for constructive reading
Innovative architectures for ultimate SOI transistors
Bibliography
Websites
Events
Exclusive to subscribers. 97% yet to be discovered!
You do not have access to this resource.
Click here to request your free trial access!
Already subscribed? Log in!
The Ultimate Scientific and Technical Reference