4. Characterization of structures

The characterization of SOI materials and devices is a delicate operation, due to the thinness of the silicon film, the presence of buried oxide and the multi-interface configuration of the structure. We also have to contend with special conditions (mechanical stresses, thickness inhomogeneities) and specific defects .

The full range of physico-chemical techniques (elastic scattering spectroscopy (RBS), Auger electron spectroscopy, secondary ion mass spectrometry (SIMS), X-ray spectrometry, ellipsometry, etc.) and microscopic techniques (transmission electron microscopy (TEM), atomic force microscopy (AFM), etc.) can be used,...