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3. Photosensitive electronic sensors
An electrical charge is created at a pixel (pixel is the contraction of picture element) in proportion to the level of light incident at that site. The complexity of high-speed image sensors lies in the way pixels are combined to achieve optimum spatial and temporal resolution of the final matrix.
3.1 Photoelectric effect
The simplest photosensitive electronic sensor is a light-sensitive gate, called a "semiconductor junction" (silicon, germanium), electrically polarized (MOS capacitance, Metal Oxyde Semiconductor) so that it can retain the electron-hole pair obtained by the photoelectric effect when illuminated by a light source emitting in the spectral absorption band of its substrate. The photoelectric effect is obtained when the energy of the incident photon,...
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Photosensitive electronic sensors
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Bibliography
Websites
UNIT (Université numérique en ingénierie et technologie), OPI (optique pour l'ingénieur) course "M7G4 Fundamentals of image sensors", http://optique-ingenieur.org/fr/cours/OPI_fr_M05_C06/co/OPI_fr_M05_C06_web.html SD association (page consulted March 2015)
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Standards and norms
- Standard for Characterization of Image, Sensors and Cameras, Release 3.0, Issued by European Machine Vision Association. - EMVA Standard 1288 - Nov 29, 2010
- Photography – Digital still cameras – Determination of exposure index, ISO speed ratings, standard output sensitivity, and recommended exposure index. - ISO 12232 - 2006
Patents
YAMADA, Shigeru, TSUJI, Masataka, and MITSUI, Kenji. High speed imaging apparatus. U.S. Patent N° 5, 412, 422, May 2, 1995.
ACIU, Alexandru V., POP, Petru, and CORLAN, Radu. High-frame rate image acquisition and motion analysis system. U.S. Patent N° 5, 625, 412, Apr. 29, 1997.
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Vision Research, USA:
Photron (Europe) Limited, United Kingdom :
NAC, Japan :
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