Overview
FrançaisABSTRACT
Scanning electron microscopy (SEM) is a powerful technique for the observation of surface topography. This technique is principally based upon the detection of secondary electrons emerging from the surface under the impact of a very fine beam of primary electrons that scans the surface observed. It allows for obtaining images with a separative power that is often of below 5 nm and a large depth of field. The various parts of the device are described: the electron sources, electron column and the various signal detectors.
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Jacky RUSTE: INSA engineer - EDF senior engineer doctorate
INTRODUCTION
Scanning Electron Microscopy (SEM) is a powerful technique for observing surface topography. It is based primarily on the detection of secondary electrons emerging from the surface under the impact of a very fine brush of primary electrons, which sweeps across the observed surface and enables images to be obtained with a separating power often below 5 nm and a great depth of field.
SEM also uses the other interactions of primary electrons with the sample: emergence of backscattered electrons, absorption of primary electrons, as well as the emission of X-ray photons and sometimes photons close to the visible range. Each of these interactions is often indicative of surface topography and/or composition.
The instrument forms a very fine (down to a few nanometers), quasi-parallel brush of electrons, strongly accelerated by adjustable voltages from 0.1 to 30 kV, focuses it on the area to be examined and progressively scans it. Appropriate detectors - specific electron detectors (secondary, backscattered, sometimes absorbed...) - complemented by photon detectors, enable significant signals to be collected as the surface is scanned, and various significant images to be formed.
The present article [P 865] recalls the interactions between imaging sources and the constitution of the current instrument. The article
This article is an update of the article written by Henri PAQUETON and Jacky RUSTE in 2006.
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KEYWORDS
materials | electronics | | Electron microscopy | imagery
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Scanning electron microscopy
Bibliography
Events
GNMEBA: two annual meetings, a thematic meeting in spring and a pedagogical meeting in December in Paris, and every 5-6 years a summer school (the last one took place in 2012 in Lille). http://www.gn.meba.org
EMAS: European congress every 2 years and a regional symposium every 2 years in alternation
Standards and norms
ISO TC202 Microbeam analysis – scanning electron microscopy :
TC202/SC1: terminology
TC202/SC2: microanalysis by electron probe
TC202/SC4: scanning electron microscopy.
Directory
Manufacturers – Suppliers – Distributors (non-exhaustive list)
Scanning electron microscopes
Carl Zeiss SMT http://microscopy.zeiss.com/microscopy/en_de/home.html
FEI Company (FEI France, formerly Philips Optique Électronique)
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