1. Materials and heterojunction physics
1.1 Materials for heterojunction electronic components
The large family of III-V semiconductors, of which GaAs, GaN and InP are only the best-known representatives in microelectronics, comprises alloys combining, in equal proportions, atoms from column III (Al, Ga, In...) and column V (N, P, As, Sb...) of Mendeleev's periodic table of elements. Their crystal structure usually takes the form of two face-centered cubic sub-lattices, made up of column III and column V atoms respectively, which interpenetrate to form a zinc-blende crystal. This type of crystal is analogous to the diamond lattice of silicon, from which it differs only in that the two sub-lattices here are made up of different atoms. A major exception is GaN and its alloys, whose most common crystal structure is a wurtzite...
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Materials and heterojunction physics
Heterojunction field-effect transistors on GaAs and InP
Bibliography
Events
Over the past 10 years, conference proceedings have been the main source of information on innovations in the field. These include the International Electron Devices Meeting (IEDM), the Compound Semiconductors IC Symposium (CSICS) and the International Microwave Symposium (IMS).
Directory
In 2010, the market for III-V components in microelectronics is worth around $5 billion. These are mainly products based on P-HEMT GaAlAs/InGaAs and HBT GaInP/GaAs on GaAs substrates, and HEMT GaN. The most important industrial players include:
United States :
Triquint http://www.triquint.com/
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