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4. Heterojunction bipolar transistors
The use of a large-gap-small-gap heterojunction as the emitter-base junction of a bipolar transistor can significantly improve performance. Although the idea goes back a long way, it was only convincingly implemented following the development of modern MBE and MOVPE epitaxy techniques in the early 1980s. This type of component is presented below in the particular case of the In 0.49 Ga 0.51 P/GaAs material pair, the most widely used today.
4.1 InGaP (N)/GaAs (p) heterojunction bipolar transistor (HBT)
The InGaP/GaAs HBT is a bipolar transistor whose In emitter 0.49 Ga 0.51 P has...
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Heterojunction bipolar transistors
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Bibliography
Events
Over the past 10 years, conference proceedings have been the main source of information on innovations in the field. These include the International Electron Devices Meeting (IEDM), the Compound Semiconductors IC Symposium (CSICS) and the International Microwave Symposium (IMS).
Directory
In 2010, the market for III-V components in microelectronics is worth around $5 billion. These are mainly products based on P-HEMT GaAlAs/InGaAs and HBT GaInP/GaAs on GaAs substrates, and HEMT GaN. The most important industrial players include:
United States :
Triquint http://www.triquint.com/
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