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3. GaN heterojunction field-effect transistors
Wide-bandgap materials based on gallium nitride and its alloys possess numerous physical properties that make them today's best candidates for microwave applications where power and robustness are critical.
Gallium nitride and its derivatives offer an unrivalled combination of physical properties:
a high bandgap (3.4 eV) for GaN, which can exceed 6 eV for AlN,
a carrier saturation velocity greater than 1x10 7 cm/s,
a remarkable breakdown electric field (3 MV/cm),
the possibility of obtaining GaN-based heteroepitaxial layers (AlGaN/GaN, InGaN/GaN, InAlN/GaN) with good transport qualities.
The ability of a material...
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GaN heterojunction field-effect transistors
Heterojunction bipolar transistors
Bibliography
Events
Over the past 10 years, conference proceedings have been the main source of information on innovations in the field. These include the International Electron Devices Meeting (IEDM), the Compound Semiconductors IC Symposium (CSICS) and the International Microwave Symposium (IMS).
Directory
In 2010, the market for III-V components in microelectronics is worth around $5 billion. These are mainly products based on P-HEMT GaAlAs/InGaAs and HBT GaInP/GaAs on GaAs substrates, and HEMT GaN. The most important industrial players include:
United States :
Triquint http://www.triquint.com/
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