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5. Comparative summary and trends
A comparative summary of the most developed heterojunction transistors (GaN HEMT, P-HEMT and M-HEMT GaAs and InP and GaAs and InP HBT) is presented in 3 . The following general comments can be added.
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Comparative summary and trends
Bibliography
Events
Over the past 10 years, conference proceedings have been the main source of information on innovations in the field. These include the International Electron Devices Meeting (IEDM), the Compound Semiconductors IC Symposium (CSICS) and the International Microwave Symposium (IMS).
Directory
In 2010, the market for III-V components in microelectronics is worth around $5 billion. These are mainly products based on P-HEMT GaAlAs/InGaAs and HBT GaInP/GaAs on GaAs substrates, and HEMT GaN. The most important industrial players include:
United States :
Triquint http://www.triquint.com/
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