Français
2. Heterojunction field-effect transistors on GaAs and InP
The use of a heterojunction between high-gap (N-doped) and low-gap (undoped) materials is the basis for the operation of heterojunction field-effect transistors. The principle of such a heterojunction was proposed by Bell Laboratories in the late 1970s. Its interest is illustrated below in the particular case of the GaAlAs (N)/GaAs (n.d.) HEMT transistor, which appeared in the early 1980s, with an initial demonstration by Thomson-CSF's Laboratoire Central de Recherche, now Thales Research and Technology – Fr .
The Ultimate Scientific and Technical Reference
This article is included in
Electronics
This offer includes:
Knowledge Base
Updated and enriched with articles validated by our scientific committees
Services
A set of exclusive tools to complement the resources
Practical Path
Operational and didactic, to guarantee the acquisition of transversal skills
Doc & Quiz
Interactive articles with quizzes, for constructive reading
Heterojunction field-effect transistors on GaAs and InP
GaN heterojunction field-effect transistors
Bibliography
Events
Over the past 10 years, conference proceedings have been the main source of information on innovations in the field. These include the International Electron Devices Meeting (IEDM), the Compound Semiconductors IC Symposium (CSICS) and the International Microwave Symposium (IMS).
Directory
In 2010, the market for III-V components in microelectronics is worth around $5 billion. These are mainly products based on P-HEMT GaAlAs/InGaAs and HBT GaInP/GaAs on GaAs substrates, and HEMT GaN. The most important industrial players include:
United States :
Triquint http://www.triquint.com/
...
The Ultimate Scientific and Technical Reference
