Article | REF: E2381 V1

Fully Depleted Silicon On Insulator (FD-SOI) Devices

Author: Sorin CRISTOLOVEANU

Publication date: November 10, 2018, Review date: January 18, 2021

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1. FD-SOI sector

1.1 Background and advantages of FD-SOI

The traditional merits of SOI are well known: total isolation of devices, fine junctions to reduce leakage currents and parasitic capacitances, robustness to irradiation, and so on. . However, they were not enough to dethrone CMOS technology on solid silicon. When the miniaturization of transistors stalled, it was demonstrated that the only way to continue along Moore's road was to reduce their thickness. This argument was decisive not only in putting SOI back on the map, but also in giving rise to the competing FinFET technology....

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