Français
2. Special physical mechanisms in FD-SOI transistors
2.1 Short channel effects
As the transistor length decreases, various mechanisms become sufficiently amplified to challenge the totalitarian supremacy of the gate over the channel. For example, the charge sharing effect (CSE), between regions controlled by the gate or by the source and drain junctions, leads to a decrease in the threshold voltage V
TF
measured at low drain voltage V
D
(figure
2
).
The Ultimate Scientific and Technical Reference
This article is included in
Electronics
This offer includes:
Knowledge Base
Updated and enriched with articles validated by our scientific committees
Services
A set of exclusive tools to complement the resources
Practical Path
Operational and didactic, to guarantee the acquisition of transversal skills
Doc & Quiz
Interactive articles with quizzes, for constructive reading
Special physical mechanisms in FD-SOI transistors
Specific techniques for characterizing FD-SOI components
Bibliography
Websites
Events
EUROSOI-ULIS: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
https://eurosoiulis2019.sciencesconf.org
ESSDERC-ESSCIRC: European Solid-State Device Research Conference & European Solid-State Circuits Conference
The Ultimate Scientific and Technical Reference
