Français
3. Specific techniques for characterizing FD-SOI components
3.1 Pseudo-MOSFET method for FD-SOI substrates
The pseudo-MOSFET transistor is activated by applying two pins (source and drain) to the surface of a Si island etched on the FD-SOI plate. . The substrate representing the grid is biased to induce an electron (V BG ...
The Ultimate Scientific and Technical Reference
This article is included in
Electronics
This offer includes:
Knowledge Base
Updated and enriched with articles validated by our scientific committees
Services
A set of exclusive tools to complement the resources
Practical Path
Operational and didactic, to guarantee the acquisition of transversal skills
Doc & Quiz
Interactive articles with quizzes, for constructive reading
Specific techniques for characterizing FD-SOI components
Innovative devices in FD-SOI technology
Bibliography
Websites
Events
EUROSOI-ULIS: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
https://eurosoiulis2019.sciencesconf.org
ESSDERC-ESSCIRC: European Solid-State Device Research Conference & European Solid-State Circuits Conference
The Ultimate Scientific and Technical Reference
