Article | REF: RE253 V1

Atomic Layer Deposition (ALD)

Authors: Nathanaelle SCHNEIDER, Frédérique DONSANTI

Publication date: October 10, 2016

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ABSTRACT

This article presents, the principle of the atomic layer deposition (ALD) technique, together with an inventory of the various materials that can be deposited in this way. There follows a brief introduction to its main current and emerging applications.

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AUTHORS

  • Nathanaelle SCHNEIDER: CNRS Research Fellow, Doctor of Chemistry from the Universities of Strasbourg and Heidelberg - Institut de Recherche et Développement de l'Énergie Photovoltaïque (IRDEP), UMR 7174 EDF-CNRS-Chimie ParisTech, Chatou, France Institut du Photovoltaïque d'Île-de-France (IPVF), France

  • Frédérique DONSANTI: Research engineer at EDF, PhD in process engineering and high technology from Pierre et Marie Curie University - Institut de Recherche et Développement de l'Énergie Photovoltaïque (IRDEP), UMR 7174 EDF-CNRS Chimie ParisTech, Chatou, France Institut du Photovoltaïque d'Île-de-France (IPVF), France

 INTRODUCTION

Alternating Flux Chemical Vapor Deposition, more commonly known as Atomic Layer Deposition (ALD or ALCVD), is a recent technique derived from Chemical Vapor Deposition (CVD). This deposition process is based on the sequential introduction of precursors, enabling the material to be produced monolayer by monolayer, and making growth self-limiting and surface-controlled.

In this article, after a brief history, we explain in detail the basic principle of ALD. This is followed by a description of material growth, detailing the various mechanisms involved. We also discuss the classes of precursors suitable for this method, and the types of reactor used. Particular attention is paid to the importance of deposition parameters (precursor, temperature, pulse and purge times, etc.) and their influence on the surface chemistries involved. Secondly, an inventory is drawn up of the materials that can be deposited using this technique, with a few process examples. Finally, we detail the main applications of this process (microelectronics, photovoltaics...) and also point out some emerging applications.

Key points

Field: Thin film deposition techniques

Degree of technology dissemination: Maturity

Technologies involved : Atomic Layer Deposition (ALD)

Applications: Materials, Thin films, Microelectronics, Photovoltaics

Main French players :

– Competence centers : SIMaP (Science et Ingénierie des Matériaux et Procédés), IEMM (Institut Européen des Membranes), LMI (Laboratoire des Multimatériaux et Interfaces), LMGP (Laboratoire des Matériaux et du Génie Physique), CIRIMAT (Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux), IRDEP (Institut de Recherche et Développement sur l'Énergie Photovoltaïque), IRCELYON (Institut de Recherches sur la Catalyse et l'Environnement de LYON), IRCP (Institut de Recherches de Chimie Paris), C2P2 (Catalyse, Chimie, Polymères et Procédés), INL (Institut de Nanotechnologies de Lyon), LTM (Laboratoire des Technologies de la Microélectronique), LAAS (Laboratoire d'Analyse et d'Architecture des Systèmes), CINaM (Centre Interdisciplinaire de Nanoscience de Marseille), CEA LITEN, CEA LETI

– Industry: Air Liquide, Altatech, Annealsys, EDF, Encapsulix, STMicroelectronics, Versum Materials

Other players worldwide :

Applied Materials Inc, ASM International N.V., Beneq, Jusung Engineering Co. Ltd, Intel, Lam Research Corporation, Oxford Instruments, Picosun, Samsung, Tokyo Electron Limited, ULVAC Technologies Inc, Ultratech/Cambridge Nanotech, Veeco Instruments Inc.

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Atomic Layer Deposition (ALD)