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1. Specifications for ALD precursors
1.1 Properties of ALD precursors
ALD precursors must be transported in the gas phase from the storage container, which is usually heated, over distances of varying length depending on the reactor architecture, before finally reacting chemically with the substrate, which is also heated to a different temperature. High volatility is therefore a major prerequisite for the precursor, but without compromising thermal stability or chemical reactivity. First and foremost, these inorganic (metallic) precursors must therefore have a finite structure, i.e. be molecular and not polymeric or a crystalline ionic network. Thermal stability over a range of temperatures is also desirable, to avoid decomposition during transport, which would generate particles and clogging of injectors in the case...
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Specifications for ALD precursors
Bibliography
Events
ALD Congress: international congress held every year, alternating between the United States, Europe and Asia.
Patents
Ruthenium precursor with two different ligands for use in semiconductor applications WO2009013721A1
Alkaline earth metal precursors for the deposition of films containing calcium and strontium WO2009116004A2
Deposition of ternary oxide films containing ruthenium and alkaline earth metals WO2009118708A1
Preparation of lanthanide-containing precursors and...
Directory
Suppliers
Air Liquide : http://aldpulse.com/chemical-suppliers-view
Air Products : http://www.airproducts.fr/products/Chemicals/Specialty-Chemicals-Electronics/Thin-Film-Deposition.aspx
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The Ultimate Scientific and Technical Reference