Overview
FrançaisABSTRACT
The atomic layer deposition (ALD) process requires precursors with high volatility and high thermal stability to allow their transport in the gas phase, but also high reactivity with the substrate. Combining all these physical and chemical properties in one derivative requires precise molecular engineering in terms of 3D structure and strength of both intra-molecular chemical bonds and inter-molecular interactions such as hydrogen and Van der Waals bonds. This article presents the various strategies available to chemists and users that allow the selection of a precursor family suitable for a process.
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Read the articleAUTHOR
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Stéphane DANIELE: University Professor - Institut de Recherches sur la Catalyse et l'Environnement de Lyon, IRCELYON-UMR CNRS 5256, Université Lyon 1, Villeurbanne, France
INTRODUCTION
ALD (Atomic Layer Deposition) is a gas-phase thin-film deposition process involving the sequential addition of a -complex or metal precursor and a reagent (H 2 O, N 2 O...) to a heated substrate. Each step is associated with a chemical reactivity: that of the precursor on the surface, then that of the reagent on the precursor, and purge sequences are provided for the elimination of coproducts.
This process requires precursors that are volatile, thermally stable (for storage and transport) and reactive with a given surface (in particular with the surface species present). The combination of all these properties within a single molecule is often linked to its three-dimensional structure and the strength of intra- and intermolecular interactions. This structure/properties linkage of molecular precursors for ALD will therefore be addressed by detailing the impact of different atomic parameters of the metal and structural parameters of the ligand such as its steric hindrance, the presence of fluorine atoms, its asymmetry and/or its electronic properties (donor or acceptor) on the volatility, stability and reactivity of these molecules. The aim of this article is to give users of ALD processes, whether chemists or not, a practical guide to understanding the performance of molecules as ALD precursors, and even to selecting the right precursor family for a process.
Field: Inorganic molecular chemistry
Degree of technology diffusion: Growth
Technologies involved : Thin film deposition
Applications: Microelectronics, barrier films, photovoltaics,
Main French players :
Competitive clusters: Minalogic http://www.minalogic.com
Industrial companies: Air Liquide https://www.airliquide.com.fr https://www.airliquide.com/fr
Other players worldwide :
Air Products http://www.airproducts.fr/products/Chemicals/Specialty-Chemicals-Electronics/Thin-Film-Deposition.aspx
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KEYWORDS
molecular engineering | inorganic precursors | intermolecular interactions | intramolecular interactions
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Precursor chemistry for the ALD process
Bibliography
Events
ALD Congress: international congress held every year, alternating between the United States, Europe and Asia.
Patents
Ruthenium precursor with two different ligands for use in semiconductor applications WO2009013721A1
Alkaline earth metal precursors for the deposition of films containing calcium and strontium WO2009116004A2
Deposition of ternary oxide films containing ruthenium and alkaline earth metals WO2009118708A1
Preparation of lanthanide-containing precursors and...
Directory
Suppliers
Air Liquide : http://aldpulse.com/chemical-suppliers-view
Air Products : http://www.airproducts.fr/products/Chemicals/Specialty-Chemicals-Electronics/Thin-Film-Deposition.aspx
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