Overview
ABSTRACT
Transmission electron microscopy is based upon the interaction of electrons with matter which causes a non-uniform distribution of the intensity of the beam on the output side of the thin blade. However, this non-uniformity does not generally allow for obtaining an image with sufficient contrast. In order to obtain usable images, it is sufficient to select a part of the electron beam by means of a diaphragm. The contrast is thus created by manipulations from the operator and depends on the operating process.
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Read the articleAUTHORS
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Miroslav KARLÍk: Czech Technical University in Prague
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Bernard JOUFFREY: École Centrale Paris
INTRODUCTION
This dossier takes a practical look at the formation of the overall image in transmission electron microscopy (TEM), which is obtained in a number of different ways. The key point is the position of the contrast diaphragm, which lies in the focal plane of the objective lens. The various types of contrast, including diffraction, interference (phase contrast) and Z-contrast (used in STEM, transmission scanning electron microscopy) are listed in this text.
Electron energy and source quality (field emission, LaB 6 emissive cathode, etc.) are also of prime importance. Correcting lens aberrations, particularly spherical aberration, greatly improves resolution, since it can now be better than a tenth of a nanometer (it can reach 0.05 nm).
It has been shown that the contrast of an image is profoundly linked to the various reflections that make up the diffraction pattern (for example, in the study of precipitates).
The high-resolution mode (interference contrast) allows us to observe the so-called structural image which, depending on the microscope's resolution, reveals columns or small groups of atomic columns. In this approach, crystalline defects can be observed and their characteristics determined, but a number of precautions must be taken, depending on the level of information required. The use of image simulation codes has become indispensable.
The dossier briefly touches on holography, which can be used, for example, to study electrical potential distributions in thin sections of transistors.
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Study of metals by transmission electron microscopy (TEM)
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