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1. Physical properties of III-N materials
1.1 Crystal structure
III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleyev's periodic table. They can be synthesized in three different crystallographic forms: wurtzite, zinc-blende and rock salt (figure 1 ). Obtaining these different structures depends on a number of parameters, such as growth conditions (pressure, temperature, III/V ratio, etc.) and the crystallographic orientation of the substrate used.
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Physical properties of III-N materials
Bibliography
Software tools
COMSOL Multiphysics, [Software] COMSOL GmbH Technoparkstrasse 1, 8005 Zürich, Switzerland
Events
International Conference on Molecular Beam Epitaxy (ICMBE)
The last one (19th) took place in Montpellier in September 2016. https://mbe2016.sciencesconf.org/
International Conference on Vapor Phase Epitaxy (ICVPE)
The last one (18th) took place in San Diego in July 2016....
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