1. Physical properties of III-N materials

1.1 Crystal structure

III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleyev's periodic table. They can be synthesized in three different crystallographic forms: wurtzite, zinc-blende and rock salt (figure 1 ). Obtaining these different structures depends on a number of parameters, such as growth conditions (pressure, temperature, III/V ratio, etc.) and the crystallographic orientation of the substrate used.

You do not have access to this resource.

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource.
Click here to request your free trial access!

Already subscribed? Log in!

The Ultimate Scientific and Technical Reference

A Comprehensive Knowledge Base, with over 1,200 authors and 100 scientific advisors

+ More than 10,000 articles and 1,000 how-to sheets, over 800 new or updated articles every year

From design to prototyping, right through to industrialization, the reference for securing the development of your industrial projects

This article is included in

Electronics

This offer includes:

Knowledge Base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

Practical Path

Operational and didactic, to guarantee the acquisition of transversal skills

Doc & Quiz

Interactive articles with quizzes, for constructive reading

Subscribe now!

Ongoing reading
Physical properties of III-N materials

Previous
page GaN-based HEMT devices - Materials and epitaxy

Heteroepitaxy of III-N materials

Bibliography

(1) - WRIGHT (A.F.), NELSON (J.S.) - “Consistent structural properties for AlN, GaN, and InN”. - Phys. Rev. B, vol. 51, no. 12, pp. 7866–7869 (March 1995).
(2) - FOUTZ (B.E.), O'LEARY (S.K.), SHUR (M.S.), EASTMAN (L.F.) - “Transient electron transport...