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2. Heteroepitaxy of III-N materials
2.1 Substrates used
The choice of substrate is crucial to the quality of heteroepitaxy. III-N materials can be grown on a variety of substrates. Ideally, gallium nitride should be grown directly on a bulk GaN substrate, in order to reduce structural defects - this is known as homomorphic growth. However, for most applications, the nature of the host substrate is different from that of the epitaxial layer. This is referred to as metamorphic growth, because in the case of GaN, there is no lattice-tuned substrate.
In industry, the value of the dislocation density is one of the most important criteria for the development of reliable devices. For the manufacture of HEMT-type structures, substrates must combine high crystalline quality, good electrical insulation...
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Heteroepitaxy of III-N materials
Conclusion
Bibliography
Software tools
COMSOL Multiphysics, [Software] COMSOL GmbH Technoparkstrasse 1, 8005 Zürich, Switzerland
Events
International Conference on Molecular Beam Epitaxy (ICMBE)
The last one (19th) took place in Montpellier in September 2016. https://mbe2016.sciencesconf.org/
International Conference on Vapor Phase Epitaxy (ICVPE)
The last one (18th) took place in San Diego in July 2016....
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EPIGAN, KempischeSteenweg 293, 3500 Hasselt, Belgium http://www.epigan.com
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MACOM/NITRONEX, 2305 Presidential drive, Durham,...
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