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4. Degradation mode of integration technologies
4.1 Chip level
4.1.1 Reconstruction of metallization
The periodic compression and extension stresses to which the thin metallization layer is subjected during thermal cycling lead to its deformation and the "reconstruction" of the aluminum grains that make it up. This is because silicon is a material with a low coefficient of thermal expansion and high resistance to deformation, compared with aluminum, which has a relatively low yield point. As a result, when the maximum temperature imposed on this metallization layer...
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Degradation mode of integration technologies
Module life under thermal stress
Bibliography
Software tools
ANSYS http://www.ansys.com
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Events
ESREF European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (international conference)
EPE Europeen conference on Power Electronics and Applications (international conference)
FIP http://www.mesago.de/en/PCIM/home.htm
ECPE European Center for...
Standards and norms
- Environmental condition and test procedures for airborne equipment, RTCA - DO 160 - 1997
- Ed. 1: Discrete Semiconductor devices – Part 15: Isolated power semiconductor devices - IEC 60747-15 -
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