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1. Physical properties of III-N materials
1.1 Crystal structure
III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleev's periodic table. They can be synthesized in three different crystallographic forms (figure 1 ):
wurtzite ;
zinc-blende ;
rock salt.
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Physical properties of III-N materials
Bibliography
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COMSOL Multiphysics, [Software] COMSOL GmbH Technoparkstrasse 1, 8005 Zürich, Switzerland
Events
International Conference on Molecular Beam Epitaxy (ICMBE) – the last (22nd) was held in Sheffield, UL in September 2022.
International Conference on Vapor Phase Epitaxy (ICVPE) – the next (21st) will take place in Las Vegas, Nevada in May 2024.
International Conference on Nitride semiconductors (ICNS) – the last (14th) will take place in Fukuoka, Japan in November 2023....
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