Article | REF: E1995 V3

HEMTs Devices based on GaN - Material and epitaxy

Author: Jean-Claude DE JAEGER

Publication date: March 10, 2024

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1. Physical properties of III-N materials

1.1 Crystal structure

III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleev's periodic table. They can be synthesized in three different crystallographic forms (figure 1 ):

  • wurtzite ;

  • zinc-blende ;

  • rock salt.

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Physical properties of III-N materials