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2. Heteroepitaxy of III-N materials
2.1 Substrates used
The choice of substrate is crucial to the quality of heteroepitaxy. III-N materials can be grown on a variety of substrates. Ideally, gallium nitride should be grown directly on a bulk GaN substrate, in order to reduce structural defects: this is known as homomorphic growth. However, for most applications, the nature of the host substrate is different from that of the epitaxial layer. This is referred to as metamorphic growth, because in the case of GaN, there is no lattice-tuned substrate.
In industry, the value of the dislocation density is one of the most important criteria for the development of reliable devices. For the manufacture of HEMT-type structures, substrates must combine high crystalline quality and good electrical insulation,...
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Heteroepitaxy of III-N materials
Environmental aspects
Bibliography
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COMSOL Multiphysics, [Software] COMSOL GmbH Technoparkstrasse 1, 8005 Zürich, Switzerland
Events
International Conference on Molecular Beam Epitaxy (ICMBE) – the last (22nd) was held in Sheffield, UL in September 2022.
International Conference on Vapor Phase Epitaxy (ICVPE) – the next (21st) will take place in Las Vegas, Nevada in May 2024.
International Conference on Nitride semiconductors (ICNS) – the last (14th) will take place in Fukuoka, Japan in November 2023....
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MACOM, 2305 Presidential drive, Durham,...
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