Article | REF: E2135 V2

Spintronics - Principles and applications of spin electronics

Authors: Jean-Philippe ATTANÉ, Manuel BIBES, Laurent VILA

Publication date: June 10, 2022

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6. Spintronic memories

The ability to write a magnetic state by field application or spin transfer, and to read it by MRT, has led to the development of magnetic memory technologies known as MRAMs (for Magnetic Random Access Memories). .

Memories were hierarchically divided between fast random access memories (SRAM and DRAM) and slow storage memories such as the hard disk. As random access memories are volatile, i.e. they retain information only if they are supplied with energy, a number of memories have been developed in an attempt to combine speed, endurance and non-volatility. These emerging non-volatile memories include phase-change memories, ferroelectric...

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Spintronic memories