3. Spin transfer torque
Applying a magnetic field to a ferromagnetic nanoelement changes its direction of magnetization, and therefore its resistance in the case of a GRM or TRM element. This makes it possible, for example, to produce magnetic field sensors (§ 5 ). On the other hand, the use of magnetic fields to reverse magnetization poses a problem in spintronic devices such as MRAM memories (§
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Spin transfer torque
Bibliography
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– MRAM :
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Avalanche
https://www.avalanche-technology.com/
Samsung
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