3. Characterization of HEMT transistors

After manufacture, GaN HEMT transistors for power applications are measured using a variety of techniques. To this end, when a set of masks is produced, in addition to the transistors themselves, various test patterns are included to characterize the manufacturing process (compliance with dimensions, yield, electrical parameter values, etc.).

3.1 Electrical characterization in static and pulse regimes

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3.1.1 Electrical quantities under static conditions

Characterization of the components in the...

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Characterization of HEMT transistors

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Bibliography

(1) - CAPPY (A.) - « Propriétés physiques et performances potentielles des composants submicroniques à effet de champ : structures conventionnelles et à gaz d'électrons bidimensionnel ». - Thèse de Doctorat d'État en Sciences Physiques, université de Lille 1 (Décembre 1986).
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