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2. Technological processes for HEMT devices
To implement HEMT transistor technology, two lithography processes are used to carry out the various stages: optical lithography, which can produce grids up to around 1 µm in length, and electronic lithography, which is a state-of-the-art tool for designing submicrometer grids. The latter technique enables patterns to be written with a resolution of up to ten nanometers. We use a set of masks comprising several writing levels, corresponding to the different stages in the manufacture of HEMTs. Figure
9
shows a HEMT component at the end of the
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Technological processes for HEMT devices
Characterization of HEMT transistors
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