Article | REF: D3077 V1

Managing soft-switching constraints

Authors: Henri FOCH, Michel METZ, Thierry MEYNARD, Hubert PIQUET, Frédéric RICHARDEAU

Publication date: May 10, 2008

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ABSTRACT

This article is a study of commutation constraints. In practice, semiconductor components, with their characteristics and imperfections, significantly impact the operating parameters of the cell, such as the switching speed, the limited current and the coupling between the power and control electrodes. The switching cell is at times modified (elements in series or in parallel, or non-dissipative) to circumvent the dispersion issue of these parameters. Energy recovery circuit designers are now offering switching-aid circuits to manage these constraints (losses, EMC, dv/dt, di/dt...). To conclude, the concept of soft-switching, that enables the removal of certain constraints, is presented.

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AUTHORS

  • Henri FOCH: Former Professor at the Institut National Polytechnique de Toulouse, Laboratoire d'Électrotechnique et d'Électronique Industrielle (LEEI)

  • Michel METZ: Professor Emeritus, Institut National Polytechnique de Toulouse, LEEI

  • Thierry MEYNARD: CNRS Research Director, LEEI

  • Hubert PIQUET: Professor at the Institut National Polytechnique de Toulouse, LEEI

  • Frédéric RICHARDEAU: CNRS Research Fellow, LEEI - with the collaboration of Guillaume GATEAU, Senior Lecturer, INPT, LEEI, Philippe LADOUX, Professor, INPT, LEEI, Emmanuel SARRAUTE, Senior Lecturer, IUFM Toulouse, LEEI, Henri SCHNEIDER, Senior Lecturer, INPT, LEEI and Christophe TURPIN, CNRS Research Fellow. - Since January 2007, LEEI has been part of LAPLACE (Plasma and Energy Conversion Laboratory).

 INTRODUCTION

One of the fundamental conclusions to be drawn from the study of a switching cell consisting of two switches, two sources and no reactive elements is that the operating point of the controlled switch must pass through a zone in the plane (v K , i K ), passing through the point (V, I) corresponding to a very high instantaneous power for the duration of the switching operation (see [D 3 076] , § 2). In order to limit the losses corresponding to this path in the dissipative zone, known as switching losses, it is important to carry out this switching as quickly as possible. Switching speed depends in particular on the characteristics of the semiconductors and the way they are controlled, and improving this characteristic is one of the main objectives of semiconductor technology development. It should be noted, however, that increases in dV/ dt and dI/ dt lead respectively to an increase in the currents induced in parasitic capacitances and the voltages induced in the meshes of surrounding circuits, thus creating a number of generally undesirable interactions grouped under the generic term of electro-magnetic compatibility (EMC). Consequently, while increasing switching speeds is one way of reducing switching losses, it would be dangerous to go too far in this direction. This is all the more true as fast switching accentuates phenomena resulting from component imperfections (diode crossover current in particular) that can lead to additional losses and excite fast oscillatory modes. Other ways of reducing switching losses in semiconductors have therefore been considered.

  • Switching assistance circuits don't actually reduce switching losses, but transfer them to auxiliary elements. These circuits were practically indispensable when power semiconductors had mediocre switching performance, but today, given the meteoric progress of modern semiconductors (IGBTs in particular), their use is virtually reserved for very high-power applications (> 1 MW) using IGCT-type semiconductors.

  • Switching aid circuits have also made it possible to devise the concept of soft switching, which consists in slightly modifying the switching cell to reduce switching losses in the switch, but without transferring them to auxiliary elements.

  • Finally, there's another way of reducing the constraints of the traditional switching...

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