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5. Applications
We've already seen that the emergence of SiC-based components was directly linked to advances in technology, and in substrate technology in particular. Indeed, since any defect initially present in the substrate replicates itself, more or less easily, in the active layer(s), it is this defect that ultimately conditions the passage of high current densities and, therefore, the maximum value of the power delivered. The current objective for power components is to achieve an active surface area of just a few square centimetres (1 to 2 cm 2 ), so as to be able to routinely deliver currents of around a hundred amperes. This has practically been achieved
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Events
International Conference on Silicon Carbide and Related Materials (ICSCRM): This international conference is held every two years (odd-numbered years).
ICSCRM 2011 – September 11 – 16, 2011, Cleveland, Ohio, USA.
ICSCRM 2009 – October 11 – 16, 2009, Nürnberg, Germany.
European Conference on Silicon Carbide and Related Materials (ECSCRM): This European conference...
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Cree Inc: (http://www.cree.com/)
II-VI Inc: (http://www.iiviwbg.com/)
Dow Corning Compound Semiconductor : (http://www.dowcorning.com/)
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