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4. Application technologies
4.1 Substrates and pseudo-substrates
The need to produce SiC-based components on an industrial scale very quickly led potential users to join forces to produce "electronic" quality substrates. Today, in specialized laboratories, ingots can reach 2 kg , while the standard wafer size on the market is 75 mm and 100 mm in diameter (i.e. 3 in and 4 in). Finally, since 2010, Cree has been announcing the forthcoming launch of 150 mm (~ 6 in) substrates with an average macrodefect density (microtubes...
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Application technologies
Applications
Bibliography
Text references
Events
International Conference on Silicon Carbide and Related Materials (ICSCRM): This international conference is held every two years (odd-numbered years).
ICSCRM 2011 – September 11 – 16, 2011, Cleveland, Ohio, USA.
ICSCRM 2009 – October 11 – 16, 2009, Nürnberg, Germany.
European Conference on Silicon Carbide and Related Materials (ECSCRM): This European conference...
Directory
Cree Inc: (http://www.cree.com/)
II-VI Inc: (http://www.iiviwbg.com/)
Dow Corning Compound Semiconductor : (http://www.dowcorning.com/)
...
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