1. Physical properties of III-N materials

1.1 Crystal structure

III-V semiconductor materials from the gallium nitride sector are composed of elements from columns 3 and 5 of Mendeleyev's periodic table. They can be synthesized in three different crystallographic forms: wurtzite, zinc-blende and rock salt (figure 1 ). Obtaining these different structures depends on a number of parameters, such as growth conditions (pressure, temperature, III/V ratio, etc.) and the crystallographic orientation of the substrate used.

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Physical properties of III-N materials

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Heteroepitaxy of III-N materials

Bibliography

(1) - WRIGHT (A.F.), NELSON (J.S.) - “Consistent structural properties for AlN, GaN, and InN”. - Phys. Rev. B, vol. 51, no. 12, pp. 7866–7869 (March 1995).
(2) - FOUTZ (B.E.), O'LEARY (S.K.), SHUR (M.S.), EASTMAN (L.F.) - “Transient electron transport...