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3. Modification and synthesis of materials by layout
3.1 Formation of buried metal layers
At high doses, doping ions, implanted in a matrix under appropriate experimental conditions (matrix temperature, ion energy and flux), enable alloy layers to be synthesized at a controlled depth. .
This method is used in particular in silicon to form buried layers of metal silicides by implantation of Ni, Co or Fe. The various stages in the synthesis of these buried silicide layers can be monitored and quantified in situ by successively alternating the implantation beam...
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