Article | REF: E1990 V2

Wide bandgap semi-conductors : the silicon carbide domain (SiC)

Authors: Jean Camassel, Sylvie Contreras

Publication date: August 10, 2012, Review date: December 4, 2017

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4. Application technologies

4.1 Substrates and pseudo-substrates

The need to produce SiC-based components on an industrial scale very quickly led potential users to join forces to produce "electronic" quality substrates. Today, in specialized laboratories, ingots can reach 2 kg , while the standard wafer size on the market is 75 mm and 100 mm in diameter (i.e. 3 in and 4 in). Finally, since 2010, Cree has been announcing the forthcoming launch of 150 mm (~ 6 in) substrates with an average macrodefect density (microtubes...

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