Article | REF: E2427 V2

Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies

Author: Pascal CHEVALIER

Publication date: January 10, 2021

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3. Manufacturing and integration with CMOS technology (BiCMOS)

The information presented in this section supplements that presented in paragraph 2 of article [E 1 425] , to which the reader is invited to refer.

3.1 BiCMOS integration issues and challenges

The main advantage of the Si/SiGe TBH is not only its compatibility, but also its filiation with silicon technologies, making it possible to integrate it with CMOS technologies. This bipolar/CMOS cointegration is not easy, however, since the manufacture of a Si/SiGe TBH can influence the performance of CMOS transistors, and vice versa.

Some of the main constraints are listed below:

  • the manufacturing thermal budget,...

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Manufacturing and integration with CMOS technology (BiCMOS)