5. Heat dissipation

5.1 Experimental methods for measuring heat dissipation

Self-heating in power GaN HEMTs is a phenomenon that limits transistor performance, so it's important to determine the temperature inside the transistor. There are several experimental approaches to determining the temperature in components. Optical methods can be used to determine the temperature at any point on the component, with varying degrees of accuracy. Electrical methods, on the other hand, provide an average temperature along the length of the component.

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Bibliography

(1) - CAPPY (A.) - Propriétés physiques et performances potentielles des composants submicroniques à effet de champ : structures conventionnelles et à gaz d'électrons bidimensionnel. - Thèse de Doctorat d'État en Sciences Physiques, université de Lille 1 (1986).
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