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3. Environmental aspects
Combined with a highly thermally conductive silicon carbide substrate, gallium nitride brings considerable advantages to power applications:
five to ten times higher voltage withstand than conventional semiconductors;
better heat dissipation.
This semiconductor can be used to produce components that combine breakdown voltage, electron mobility and high current. Applications of GaN devices dedicated to RF or EP generally lead to lower costs and energy consumption, which in turn translates into lower greenhouse gas emissions.
Beyond radiation resilience, for satellite applications, GaN devices offer unrivalled RF electrical performance compared with silicon and GaAs components. For space applications, this translates into smaller, lighter and more...
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Environmental aspects
Conclusion
Bibliography
Software tools
COMSOL Multiphysics, [Software] COMSOL GmbH Technoparkstrasse 1, 8005 Zürich, Switzerland
Events
International Conference on Molecular Beam Epitaxy (ICMBE) – the last (22nd) was held in Sheffield, UL in September 2022.
International Conference on Vapor Phase Epitaxy (ICVPE) – the next (21st) will take place in Las Vegas, Nevada in May 2024.
International Conference on Nitride semiconductors (ICNS) – the last (14th) will take place in Fukuoka, Japan in November 2023....
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SOITEC BELGIUM, KempischeSteenweg 293, 3500 Hasselt, Belgium http://www.epigan.com
CREE, Durham, North Carolina, USA http://www.cree.com
MACOM, 2305 Presidential drive, Durham,...
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