Article | REF: D3120 V1

SiC power components - Technology

Author: Dominique TOURNIER

Publication date: February 10, 2007

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5. Conclusions

The commercial availability of SiC-4 wafers coupled with improved manufacturing technology will encourage the development, availability and use of silicon carbide power components. The current and voltage ratings of Schottky diodes are now compatible with use in industrial applications. The trend is to increase these ratings. The commercialization of bipolar diodes and transistors involves resolving the degradation of characteristics caused by stacking faults. Recent technological advances (RAF growth and LBP2 growth) point to the possibility of commercialization within the next decade. Single-pole JFET and MOSFET power switches are currently being developed for voltage ranges from 1 kV to 3.5 kV. The JFET, a normally conducting component operating at 300°C, is already available for sampling....

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