Article | REF: D3120 V1

SiC power components - Technology

Author: Dominique TOURNIER

Publication date: February 10, 2007

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3. Component manufacturing technologies

The various manufacturing techniques and resources employed for SiC are similar to those used in the silicon industry. They have been developed and optimized to suit the specific features of SiC.

3.1 Ion implantation doping

In terms of manufacturing technology, a great deal of effort has been devoted to reducing the damage produced in the crystal by ion implantation, on the one hand, and to maintaining the integrity of the surface after the post-implantation annealing process, on the other.

Indeed, the impossibility of using conventional doping techniques by diffusion of dopants in SiC

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