Overview
Français
Read this article from a comprehensive knowledge base, updated and supplemented with articles reviewed by scientific committees.
Read the articleAUTHORS
-
Stéphane LEFEBVRE: Associate Professor of Electrical Engineering - Doctorate from the École normale supérieure de Cachan - Senior Lecturer at the Conservatoire National des Arts et Métiers
-
Bernard MULTON: Associate Professor of Electrical Engineering - Doctorate from the University of Paris 6 - University Professor, École normale supérieure de Cachan – Antenne de Bretagne
INTRODUCTION
The context and principles of MOSFET (Metal Oxide Semiconductor Field Effect) and IGBT (Insulated Gate Bipolar Transistor) control were the subject of the following articles and .
This article describes control circuits for MOSFET and IGBT insulated-gate transistors. Examples of control circuits for non-isolated low-side transistors and high-side transistors are given.
Control circuits for bipolar power components are studied by .
The Ultimate Scientific and Technical Reference
This article is included in
Conversion of electrical energy
This offer includes:
Knowledge Base
Updated and enriched with articles validated by our scientific committees
Services
A set of exclusive tools to complement the resources
Practical Path
Operational and didactic, to guarantee the acquisition of transversal skills
Doc & Quiz
Interactive articles with quizzes, for constructive reading
MOSFET and IGBT control circuits
Sizing
References
The Ultimate Scientific and Technical Reference
