2. Micro-nanotechnologies revolutionize optics and optoelectronics
2.1 Quantum structures and self-organization
In the 1980s-1990s, the development of techniques for growing III-V semiconductors on GaAs or InP substrates, such as molecular beam epitaxy (MBE) or metal-organic vapor deposition (MOCVD), made it possible to achieve deposition accuracies close to the thickness of a molecular layer (≈ 0.2 nm) . It was then possible to produce semiconductor heterostructures in which charge carriers (electrons and holes) were confined in the plane of the layers, which constituted narrow potential...
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Micro-nanotechnologies revolutionize optics and optoelectronics
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