3. Spin transfer torque

Applying a magnetic field to a ferromagnetic nanoelement changes its direction of magnetization, and therefore its resistance in the case of a GRM or TRM element. This makes it possible, for example, to produce magnetic field sensors (§ 5 ). On the other hand, the use of magnetic fields to reverse magnetization poses a problem in spintronic devices such as MRAM memories (§

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Spin transfer torque

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Bibliography

(1) - SESHAN (K.), SCHEPIS (D.) et al - Handbook of thin film deposition. - William Andrew (2018).
(2) - CUI (Z.) - Nanofabrication : principles, capabilities and limits. - Springer (2016).
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