5. Conclusion

As an introduction to the physics of power semiconductor components, this article explains the basic operating mechanisms. Power microelectronics has developed technologies (large gap) and components (IGBTs) that distinguish it from signal technologies (FinFET, for example), without sharing strong similarities (GaN initially found its first commercial application in RF). Each structure has its own field of application, as shown in figure 57 , which essentially depends on the conduction mechanism employed (unipolar or bipolar). The development of wide-bandgap materials will enable us to push back these limits once we have mastered the sometimes much more complex manufacturing process.

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Glossary

Bibliography

(1) - ROULSTON (D.J.) - Bipolar Semi-conductor devices. - McGraw-Hill Education (1990).
(2) - BALIGA (B.J.) - Power semi-conductor devices. - Springer Science & Business Media (1996).
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