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2. Voltage withstand of flat devices
In the study of power structures, it's convenient to define voltage withstand in a one-dimensional way, first disregarding edge effects and then specifying them. In other words, we approach the subject by assuming that the blocking junction of the devices under analysis is ideally flat.
2.1 Blocking junction transition zone
When a PN junction is reverse-biased, only the minority carriers from each of the P and N regions can cross the metallurgical junction. Majority carriers, on the other hand, desert the vicinity, and an essentially unpopulated space charge is established on both sides (figure 1 ).
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Voltage withstand of flat devices
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